2SB624 features micro package. high dc current gain. hfe:200typ. (v ce =-1v, i c =-100ma) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -30 v collector to emitter voltage v ceo -25 v emitter to base voltage v ebo -5 v collector current (dc) i c -700 ma total power dissipation p t 200 mw junction temperature t j 150 storage temperature range t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-30v,i e = 0 -100 na emitter cutoff current i ebo v eb =-5.0v,i c = 0 -100 na dc current gain * h fe v ce =-1.0v,i c = -100 ma 110 200 400 base to emitter voltage * v be v ce =-6.0v,i c = -10 ma -600 -640 -700 mv collector saturation voltage * v ce(sat) i c = -700 ma, i b = -70 ma -0.25 -0.6 v output capacitance c ob v cb =-6.0v,i e = 0, f = 1.0 mhz 17 pf gain bandwidth product f t v ce =-6.0v,i e = 10 ma 160 mhz * pulsed: pw 350 s, duty cycle 2% h fe classification marking rank12345 h fe 110 180 135 220 170 270 200 320 250 400 bv product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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